IGBT and Super Junction MOSFET devices are a novel type of power semiconductor and a relatively new technology that are primarily utilised for high-voltage, high frequency, and low current applications. They are manufactured utilising a multi-step lithogold process and the deep trench technique. A power semiconductor with quick switching and excellent efficiency is an IGBT. It competes with other semiconductor products like Silicon carbides, MOSFETs, and Gallium Nitride (GaN). By offering both high input impedance and high-voltage drive, IGBTs combine the benefits of MOSFETs and bipolar transistors.
IGBT and Super Junction MOSFET are a new class of high-voltage and high-frequency power semiconductor components. They are frequently employed in the creation of electronics that demand high power density, system dependability, and efficiency, and are produced utilising the multi-epitaxial growth and deep trench technologies. These electronics include lighting, servers, computers, solar inverters, industrial power supply parts, and consumer electronics.
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